Electrical Engineering MCQs

Page No. 358

The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is___________?


a130 μs

✖


b135 μs

✓


c140 μs

✖


d145 μs

✖


View Answer 135 μs

Maximum power loss occurs during_________________?


adelay time

✖


brise time

✓


cspread time

✖


dall

✖


View Answer rise time

Spread time is defined as the interval during which_____________?


aanode voltage drops from 10 % of its initial value to zero

✖


banode current rises from 90 % to its final value

✓


cboth (A) and (B)

✖


d anode current rises from 10 % to 90 % of its final value

✖



The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?


aTurn on

✓


bNot turn on

✖


cTurn on if inductance is removed

✖


dTurn on if pulse frequency us increased to two times

✖


View Answer Turn on

A power MOSFET has three terminals called___________?


aCollector, emitter and gate

✖


bDrain, source and gate

✓


cDrain, source and base

✖


dCollector, emitter and base

✖



Rise time is defined by the interval when____________?


agate current rises from 90 % to 100 % of it final value

✖


banode voltage drops from 90 % to 10 % of its initial value

✖


canode current rises 10 % to 90 % of its final value

✖


dboth B and C

✓


View Answer both B and C

A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?


aIGBT

✓


bFCT

✖


cMCT

✖


dGTO

✖


View Answer IGBT

Delay time is defined by the interval when_______________?


agate current increases from 90 % to 100 % of its final value

✖


banode current reaches 10 % from forward leakage current

✖


canode voltage drops from 100 % to 90 % of its actual value

✖


dall of these

✓


View Answer all of these

Which one is most suitable power device for high frequency (>100 KHz) switching application?


aBJT

✖


bPower MOSFET

✓


cSchottky diode

✖


dMicrowave transistor

✖


View Answer Power MOSFET

Snubber circuit is used with SCR_________________?


ain series

✖


bin parallel

✓


ceither series or parallel

✖


danti parallel

✖


View Answer in parallel

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