Electrical Engineering MCQs

Page No. 357

Which statement is true ?


aReverse recovery time ( trr ) > gate recovery time (tgr)

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b Device turn OFF time ( tq ) > reverse recover time (trr)

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cCircuit turn OFF time > device turn OFF time ( tq )

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d All of these

✓


View Answer All of these

Which of following is normally ON device?


aSIT

✓


bBJT

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cTRIAC

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dIGBT

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View Answer SIT

Typical range of thyristor turn OFF time is______________?


a3 – 10 µs

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b3 – 50 µs

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c3 – 100 µs

✓


d3 – 500 µs

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View Answer 3 – 100 µs

Power transistor are type of___________?


aB.JTs

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bMOSFETs

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cIGBTs

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dAll of above

✓


View Answer All of above

During reverse recovery time__________________?


acharge carriers of J2 junction recombined

✓


bcharge carriers of J2 junction is swept out

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ccharge carrier of J1 junction removed

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dcharge carriers of J3 junction is removed

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Which of the following is true about SIT?


aSIT is a high power, high frequency device

✓


bSIT is a high power, low frequency device

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cSIT is a high power, high voltage device

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dSIT is a low power, high frequency device

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During which time maximum conduction spreading take place in the thyristor during turn ON?


aDelay time

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bSpread time

✓


cRise time

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dSame for every case

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View Answer Spread time

A GTO can be turned on by applying___________?


a Positive gate signal

✓


bPositive drain signal

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cPositive source signal

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dNone of these

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SITH is also known as___________?


aFilled controlled diode

✓


bFilled controlled rectifier

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cSilicon controlled rectifier

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dNone of these

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The typical time of rising time lies between______________?


a10 – 20 µs

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b40 – 60 µs

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c1 – 4 µs

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d90 – 100 µs

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View Answer 1 – 4 µs

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