Electrical Engineering MCQs

Page No. 32

For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than_____________?


a10 IB


b 3 IB


c2 IB


d4 IB


View Answer 10 IB

The disadvantage of base resistor method of transistor biasing is that it_________________?


aIs complicated


bIs sensitive to changes in ß


c Provides high stability


d None of the above



An ideal value of stability factor is________________?


a100


b200


cMore than 200


d1


View Answer 200

The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?


aOne hundredth


bOne tenth


cOne thousandth


d One millionth


View Answer One thousandth

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?


a100 µA


b25 µA


c20 µA


d 50 µA


View Answer 50 µA

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to___________________?


a6 mA


bmA


c3 mA


d1 mA


View Answer 3 mA

The circuit that provides the best stabilization of operating point is___________________?


a Base resistor bias


b Collector feedback bias


cPotential divider bias


dNone of the above


View Answer None of the above

Transistor biasing is generally provided by a_______________?


aBiasing circuit


bBias battery


cDiode


dNone of the above


View Answer Biasing circuit

Transistor biasing is done to keep _____________in the circuit?


aProper direct current


b Proper alternating current


cThe base current small


dCollector current small


View Answer Proper direct current

For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?


aBe zero


bBe 0.01 V


cNot fall below 0.7 V


dBe between 0 V and 0.1 V


View Answer Not fall below 0.7 V

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