Electrical Engineering MCQs

Page No. 30

In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor ___________________?


a25

✖


b50

✓


c100

✖


d 200

✖


View Answer 50

If the value of collector current IC increases, then the value of VCE ______________?


aRemains the same

✖


bDecreases

✓


cIncreases

✖


dNone of the above

✖


View Answer Decreases

In a particular biasing circuit, the value of RE is about _________________?


a10 kO

✖


b1 MO

✖


c100 kO

✖


d800 O

✓


View Answer 800 O

The value of VBE ___________________?


aDepends upon IC to moderate extent

✖


b Is almost independent of IC

✓


c Is strongly dependant on IC

✖


dNone of the above

✖



A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?


a105 kO

✖


b530 kO

✓


c315 kO

✖


dNone of the above

✖


View Answer 530 kO

When the temperature changes, the operating point is shifted due to _______________?


aChange in ICBO

✓


bChange in VCC

✖


cChange in the values of circuit resistance

✖


dNone of the above

✖


View Answer Change in ICBO

The stabilisation of operating point in potential divider method is provided by_______________?


aRE consideration

✓


bRC consideration

✖


cVCC consideration

✖


dNone of the above

✖


View Answer RE consideration

In the design of a biasing circuit, the value of collector load RC is determined by__________________?


aVCE consideration

✓


bVBE consideration

✖


cIB consideration

✖


dNone of the above

✖


View Answer VCE consideration

For germanium transistor amplifier, VCE should_______________for faithful amplification?


aBe zero

✖


bBe 0.2 V

✖


cNot fall below 0.7 V

✓


dNone of the above

✖


View Answer Not fall below 0.7 V

In a transistor amplifier circuit VCE = VCB +________________?


aVBE

✓


b2VBE

✖


c5 VBE

✖


dNone of the above

✖


View Answer VBE

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