Electrical Engineering MCQs

Page No. 30

In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor ___________________?


a25


b50


c100


d 200


View Answer 50

If the value of collector current IC increases, then the value of VCE ______________?


aRemains the same


bDecreases


cIncreases


dNone of the above


View Answer Decreases

In a particular biasing circuit, the value of RE is about _________________?


a10 kO


b1 MO


c100 kO


d800 O


View Answer 800 O

The value of VBE ___________________?


aDepends upon IC to moderate extent


b Is almost independent of IC


c Is strongly dependant on IC


dNone of the above



A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?


a105 kO


b530 kO


c315 kO


dNone of the above


View Answer 530 kO

When the temperature changes, the operating point is shifted due to _______________?


aChange in ICBO


bChange in VCC


cChange in the values of circuit resistance


dNone of the above


View Answer Change in ICBO

The stabilisation of operating point in potential divider method is provided by_______________?


aRE consideration


bRC consideration


cVCC consideration


dNone of the above


View Answer RE consideration

In the design of a biasing circuit, the value of collector load RC is determined by__________________?


aVCE consideration


bVBE consideration


cIB consideration


dNone of the above


View Answer VCE consideration

For germanium transistor amplifier, VCE should_______________for faithful amplification?


aBe zero


bBe 0.2 V


cNot fall below 0.7 V


dNone of the above


View Answer Not fall below 0.7 V

In a transistor amplifier circuit VCE = VCB +________________?


aVBE


b2VBE


c5 VBE


dNone of the above


View Answer VBE

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