Electrical Engineering MCQs

Page No. 80

Which of the following is most difficult to fabricate in an IC ?


aDiode


bTransistor


c FET


dCapacitor


View Answer Capacitor

A common base configuration of a pnp transistor is analogous to _____________?of a JFET


acommon source configuration


bcommon drain configuration


ccommon gate configuration


d none of the above



In a JFET, IDSS is known as ________________?


adrain to source current


bdrain to source current with gate shorted


cdrain to source current with gate open


dnone of the above



In a certain CS JFET amplifier, RD= 1kO , RS= 560 O , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ________________?


a450


b45


c2.52


d4.5


View Answer 4.5

A certain p-channel E-MOSFET has VGS(th) = -2V. If VGS= 0V, the drain current is ____________?


a0 mA


bID(on)


cmaximum


dIDSS


View Answer 0 mA

A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA and VGS(off) = -5 V. The value of the drain current is _____________?


a20 mA


b0 mA


c40 mA


d10 mA


View Answer 20 mA

At cut-off, the JFET channel is _____________?


aat its widest point


bcompletely closed by the depletion region


cextremely narrow


d reverse baised



A certain JFET data sheet gives VGS(off) = -4 V. The pinch-off voltage Vp is _____________?


a+4 V


b-4 V


c dependent on VGS


ddata insufficient


View Answer +4 V

The source terminal of a JEFT corresponds to _____________ of a vacuum tube?


aplate


bcathode


cgrid


dnone of the above


View Answer cathode

The channel of a JFET is between the ________________?


agate and drain


bdrain and source


cgate and source


dinput and output


View Answer drain and source

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